march 2011 fdd3672_f085 n-channel ultrafet trench mosfet fdd3672_f085 rev. c 1 www.fairchildsemi.com fdd3672_f085 n-channel ultrafet trench mosfet 100v, 44a, 28m features ? typ r ds(on) = 24m at v gs = 10v, i d = 44a ? typ q g(10) = 24nc at v gs = 10v ? low miller charge ? low q rr body diode ? optimized efficiency at high frequencies ? uis capability (single pulse and repetitive pulse) ? qualified to aec q101 ? rohs compliant applications ? dc/dc converters and off-line ups ? distributed power architectures and vrms ? primary switch for 24v and 48v systems ? high voltage synchronous rectifier
fdd3672_f085 n-channel ultrafet trench mosfet fdd3672_f085 rev. c 2 www.fairchildsemi.com mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current continuous (t c < 30 o c, v gs = 10v) 44 a pulsed see figure 4 e as single pulse avalanche energy (note 1) 73 mj p d power dissipation 144 w derate above 25 o c0.96w/ o c t j , t stg operating and storage temperature -55 to +175 o c r jc maximum thermal resistance junction to case 1.04 o c/w r ja maximum thermal resistance junction to ambient to-263,1in 2 copper pad area 52 o c/w package marking and ordering information device marking device package reel size tape width quantity fdd3672 fdd3672_f085 to-252aa 330mm 16mm 2500 units electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 100 - - v i dss zero gate voltage drain current v ds = 80v, v gs = 0v - - 1 a t j = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a234v r ds(on) drain to source on resistance i d = 44a, v gs = 10v - 0.024 0.028 i d = 21a, v gs = 6v, - 0.028 0.047 i d = 44a, v gs = 10v, t j = 175c - 0.063 0.074 c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 1635 - pf c oss output capacitance - 240 - pf c rss reverse transfer capacitance - 60 - pf q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 50v i d = 44a i g = 1.0ma -2436nc q g(th) threshold gate charge v gs = 0 to 2v - 3 4.5 nc q gs gate to source gate charge -8.3-nc q gs2 gate charge threshold to plateau - 5.3 - nc q gd gate to drain ?miller? charge - 5.8 - nc
fdd3672_f085 n-channel ultrafet trench mosfet fdd3672_f085 rev. c 3 www.fairchildsemi.com electrical characteristics t j = 25 o c unless otherwise noted switching characteristics drain-source diode characteristics notes: 1: starting t j = 25 o c, l = 0.2mh, i as = 27a symbol parameter test conditions min typ max units t on turn-on time v dd = 50v, i d = 44a, v gs = 10v, r gs = 11 - - 78 ns t d(on) turn-on delay time - 12 - ns t r turn-on rise time - 37 - ns t d(off) turn-off delay time - 24 - ns t f turn-off fall time - 44 - ns t off turn-off time - - 70 ns v sd source to drain diode voltage i sd = 44a - 0.9 1.25 v i sd = 21a - 0.8 1.0 v t rr reverse recovery time i f = 44a, di sd /dt = 100a/ s -4457ns q rr reverse recovery charge - 58 76 nc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification.
fdd3672_f085 n-channel ultrafet trench mosfet fdd3672_f085 rev. c 4 www.fairchildsemi.com typical characteristics figure 1. normalized po wer dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature figure 3. normalized maximum transient thermal impedance figure 4. peak current capability 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature ( o c ) 25 50 75 100 125 150 175 0 10 20 30 40 50 current limited by package v gs = 10v i d , drain current (a) t c , case temperature ( o c ) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t c p dm t 1 t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdd3672_f085 n-channel ultrafet trench mosfet fdd3672_f085 rev. c 5 www.fairchildsemi.com figure 5. forward bias safe operating area note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching capability figure 7. transfer characteristics figure 8. saturation characteristics figure 9. drain to source on-resistance variation vs gate to source voltage figure 10. normalized drain to source on resistance vs junction temperature typical characteristics 110100300 0.1 1 10 100 200 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc 0.001 0.01 0.1 1 10 100 1 10 100 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) 012345 0 20 40 60 80 v gs = 5v v gs = 6v v gs = 7v v gs = 8v v gs = 10v pulse duration = 80 s duty cycle = 0.5% max v ds , drain to source voltage (v) i d , drain current (a) 5678910 0 20 40 60 80 100 v gs , gate to source voltage ( v ) t j = 25 o c t j = 175 o c i d = 44a pulse duration = 80 s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m ) -80 -40 0 40 80 120 160 200 0.6 1.0 1.5 2.0 2.5 3.0 pulse duration = 80 s duty cycle = 0.5% max i d = 44a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c )
fdd3672_f085 n-channel ultrafet trench mosfet fdd3672_f085 rev. c 6 www.fairchildsemi.com figure 11. normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature figure 13. capacitance vs drain to source voltage figure 14. gate charge vs gate to source voltage typical characteristics -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 1.4 v gs = v ds i d = 250 a normalized gate threshold voltage t j , junction temperature ( o c ) -80 -40 0 40 80 120 160 200 0.85 0.90 0.95 1.00 1.05 1.10 1.15 i d = 5ma normalized drain to source breakdown voltage t j , junction temperature ( o c ) 0.1 1 10 80 10 100 1000 10000 f = 1mhz v gs = 0v c rss c iss c oss v ds , drain to source voltage ( v ) capacitance (pf) 0 5 10 15 20 25 0 2 4 6 8 10 i d = 44a v dd = 60v v dd = 40 v v dd = 50 v q g , gate charge(nc) v gs , gate to source voltage(v)
|
